Nickel Silicide, Ni2Si

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Nickel Silicide, Ni2Si

Silicon (NiSi) is an austenitic (NiSi) alloy (1); it is used as the negative pole material of n-type thermocouple. Its thermoelectric stability is better than that of E, J and K type electric couple.Nickel silicon alloy should not be placed in sulfur-containing gas. Recently, it is listed as a type of thermocouple in international standard.


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Molecular fomula  Ni2Si
CAS Number 12059-14-2
Traits gray black metal powder
Density  7 . 39g / cm3
Melting point  1309℃
Uses  microelectronic integrated circuits , nickel silicide film , silicon nickel siliconthermocouple

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Silicon (NiSi) is an austenitic (NiSi) alloy (1); it is used as the negative pole material of n-type thermocouple. Its thermoelectric stability is better than that of E, J and K type electric couple.
Nickel silicon alloy should not be placed in sulfur-containing gas. Recently, it is listed as a type of thermocouple in international standard.
The parameters of NiSi are as follows:
Chemical composition: Si: 4.3%, Mg: 0.1%, the rest is Ni
Density: 8.585g/cm3
Resistance: 0.365 Ω mm2 / MResistance temperature coefficient (20-100 ° C) 689x10 minus 6th power / KCoefficient of thermal expansion (20-100 ° C) 17x10 minus 6th power / KThermal conductivity (100 ° C) 27xwm negative first power K negative first powerMelting point: 1309 ° C

Application fields:
Silicon is the most widely used semiconductor materials. A variety of metal silicides have been studied for contact and interconnection technology of semiconductor devices. MoSi2, WSI and
Ni2Si have been introduced into the development of microelectronic devices. These silicon-based thin films have good matching with silicon materials, and can be used for insulation, isolation, passivation and interconnection in silicon devices,NiSi, as the most promising self-aligned silicide material for nanoscale devices, has been widely studied for its low silicon loss and low formation heat budget, low resistivity and no linewidth effect In graphene electrode, nickel silicide can delay the occurrence of pulverization and cracking of silicon electrode, and improve the conductivity of the electrode.The wetting and spreading effects of nisi2 alloy on SiC ceramics at different temperatures and atmospheres were investigated.


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