vanadium silicide, VSi2

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vanadium silicide, VSi2

Metallic prismatic crystal. The relative density was 4.42. Insoluble in col water and Hot water, soluble in hydrofluoric acid, insoluble in ethanol, ether and  acid. Method: according to the match The ratio of vanadium pentoxide to silicon reacts at 1200 ℃, or will be in proportion to the metal Vanadium can be obtained  by reaction of vanadium with silicon at high temperature.


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Chemical formula VSi2. molecular weight 107.11。 Metallic prismatic crystal. The relative density was 4.42. Insoluble in coldwater and Hot water, soluble in hydrofluoric acid, insoluble in ethanol, ether and acid. Method: according to the match The ratio of vanadium pentoxide to siliconreacts at 1200 ℃, or will be in proportion to the metal Vanadium can be obtained by reaction of vanadium with silicon at high temperature. Application: used for acid resistance and fire resistance
Material Science.

1.Preparation of vanadium silicide thin films. Thin layer silicides with good propertiescan be directly synthesized by implantation of vanadium metal ions with high beam density. With the increase of the beam density, the vanadium silicide phase grows, and the sheet resistance Rs of the thin silicide decreases obviously. When the beam density is 25 μ A / cm2, RS reaches the minimum value of 22 ψ, which indicates that continuous silicide has been formed. X-ray diffraction analysis showed that four kinds of vanadium silicides, including V3Si, V5Si3, V3Si5 and VSi2, were formed in the implanted layer. After annealing, RS decreases obviously, the minimum rs can be reduced to 9 ψ, and the resistivity can be as low as 72 μ ψ m, which indicates that the quality of vanadium silicide thin layer has been further improved. After high beam density injection and annealing, the vanadium silicide phase grows further. High beam density injection and high temperature annealing (1200 ℃) stil.

2. Vanadium silicide is a kind of sound absorbing ceramic material. The surface layer with sound absorbing property is coated on the surface of the base layer.


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